vishay siliconix SUP85N10-10P document number: 64833 s11-2239-rev. b, 14-nov-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 100 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? industrial notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 100 0.010 at v gs = 10 v 85 d 77 t o-220ab top view gd s ordering information: SUP85N10-10P-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 85 d a t c = 70 c 83 pulsed drain current i dm 240 avalanche current i as 60 single avalanche energy a l = 0.1 mh e as 180 mj maximum power dissipation a t c = 25 c p d 227 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.55
www.vishay.com 2 document number: 64833 s11-2239-rev. b, 14-nov-11 vishay siliconix SUP85N10-10P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 120 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0080 0.0100 v gs = 10 v, i d = 20 a, t j = 125 c 0.0146 0.0185 forward transconductance a g fs v ds = 15 v, i d = 20 a 70 s dynamic b input capacitance c iss v gs = 0 v, v ds = 50 v, f = 1 mhz 4660 pf output capacitance c oss 315 reverse transfer capacitance c rss 150 total gate charge c q g v ds = 50 v, v gs = 10 v, i d = 75 a 77 120 nc gate-source charge c q gs 25 gate-drain charge c q gd 20 gate resistance r g f = 1 mhz 0.25 1.2 2.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 50 v, r l = 0.67 i d ? 75 a, v gen = 10 v, r g = 1 15 25 ns rise time c t r 12 20 turn-off delay time c t d(off) 25 40 fall time c t f 815 drain-source body diode characteristics t c = 25 c b continuous current i s 85 a pulsed current i sm 240 forward voltage a v sd i f = 5 a, v gs = 0 v 0.8 1.5 v reverse recovery time t rr i f = 5 a, di/dt = 100 a/s 74 115 ns peak reverse recovery current i rm(rec) 6.7 10 a reverse recovery charge q rr 250 400 nc
vishay siliconix SUP85N10-10P document number: 64833 s11-2239-rev. b, 14-nov-11 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance 0 20 40 60 8 0 100 120 012345 v gs =10 v thr u 7 v v gs =6 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 30 60 90 120 150 0 1020304050 i d - drain c u rrent (a) - transcond u ctance (s) g fs t c = 125 c t c = - 55 c t c = 25 c c rss 0 1000 2000 3000 4000 5000 6000 0 204060 8 0 100 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) transfer characteristics on-resistance vs. drain current gate charge 0 2 4 6 8 10 0246 8 10 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.000 0.005 0.010 0.015 0.020 0204060 8 0 100 120 v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0204060 8 0 i d =16a v ds =75 v v ds =50 v v ds =25 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 64833 s11-2239-rev. b, 14-nov-11 vishay siliconix SUP85N10-10P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown voltage vs. junction temperature 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.00 0.01 0.02 0.03 0.04 0.05 34567 8 910 t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 100 106 112 11 8 124 130 - 50 - 25 0 25 50 75 100 125 150 b v dss ( v ) i d =1ma t j -j u nction temperat u re (c) source-drain diode forward voltage threshold voltage single pulse avalanche current capability vs. time 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = - 50 c t j = 150 c t j = 25 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) - 1.7 - 1.2 - 0.7 - 0.2 0.3 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1ma v ariance ( v ) v gs(th) t j - temperat u re (c) t a v (s) (a) i da v 100 10 1 t j = 25 c t j = 150 c 10 -3 10 -2 1 10 -1 10 -4 10 -5
vishay siliconix SUP85N10-10P document number: 64833 s11-2239-rev. b, 14-nov-11 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d t c = 25 c single p u lse 100 s 1 ms 10 ms 100 ms, dc limited b yr ds(on) * power derating, junction-to-case 0 60 120 1 8 0 240 300 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) current derating* 0 20 40 60 8 0 100 120 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a)
www.vishay.com 6 document number: 64833 s11-2239-rev. b, 14-nov-11 vishay siliconix SUP85N10-10P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64833 . normalized thermal transient impedance, junction-to-case 1 0.1 0.01 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
package information www.vishay.com vishay siliconix revison: 14-oct-13 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t13-0724-rev. o, 14-oct-13 dwg: 5471
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